THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME

摘要

A TFT display panel is provided to improve a characteristic of a TFT and avoid generation of an afterimage by forming a date line made of an aluminum layer and a molybdenum layer and by forming a channel made of etching gas with a predetermined flowrate. A gate line is formed on a substrate(110). A gate insulation layer(140) is formed on the gate line. A semiconductor layer is formed on the gate insulation layer. A data line(171) is formed on the semiconductor layer, including a source electrode(173). A drain electrode(175) is formed on the semiconductor layer, confronting the source electrode. A pixel electrode is connected to the drain electrode. The data line includes an aluminum-including conductive layer and a molybdenum-including conductive layer formed in at least one of the lower and upper portions of the aluminum-including conductive layer. The semiconductor layer has first and second portions. The first portion has substantially the same type of plane as the data line and the drain electrode. The second portion is not covered with the data line and the drain electrode, positioned between the source electrode and the drain electrode. The second portion includes a chlorine atom of 3~20 atom percent. A resistive contact member(161,165) is included between the semiconductor layer and the data line.