METHOD FOR FORMING CONTACT HOLE AND METHOD FOR FABRICATING THIN FILM TRANSISTOR PLATE FABRICATED BY THE SAME

摘要

A contact hole forming method, and a manufacturing method of a thin film transistor substrate using the same are provided to improve a profile of a contact hole and prevent attacks on a metal line placed under an insulating layer by controlling an etch rate when the insulating layer deposited at a low temperature is etched. A substrate(1) including a metal line(2) containing Ag is prepared. An insulating layer(4) is formed on an entire surface of the substrate through a low-temperature process. A predetermined portion of the insulating layer is etched by a dry etching method using an anoxy gas including a fluorine-based gas and a nitrogen gas to expose the metal line.