| 摘要 |
PROBLEM TO BE SOLVED: To provide an NAND flash memory element and its manufacturing method for improving disturb characteristics. SOLUTION: This method for manufacturing an NAND flash memory element includes a step for providing a semiconductor substrate where a drain select transistor DSL, a source select transistor SSL, and memory cell transistors connected in series between them are formed; and a step for forming an oxide film in the surface of the semiconductor substrate at both sides of the gate of the source select transistor. COPYRIGHT: (C)2007,JPO&INPIT
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