| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor device capable of making a peripheral circuit region compact, and making a chip size compact. SOLUTION: The device is provided with a semiconductor substrate 1; a memory cell region including a plurality of memory cells formed on the main surface of the semiconductor substrate 1; an active region 3a formed on the main surface of the semiconductor substrate 1, and reaching the memory cell region from the peripheral region of the memory cell region; a first gate 12a formed on the active region 3a through a first gate insulation film 71; and a second gate 13b formed on the active region 3a, formed through a second gate insulation film 72 thicker than the first gate insulation film 71, and being narrower than the first gate 12a. COPYRIGHT: (C)2007,JPO&INPIT
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