| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an increase in junction leak current can be suppressed by preventing a sidewall from being side-etched certainly, and to provide its manufacturing method. SOLUTION: An aluminum oxide film 4 and a silicon nitride film 5 are formed sequentially on the entire surface of a semiconductor substrate 100 where a gate insulating film 1, a gate electrode 2, and an extension region 3 using the gate electrode 2 as a mask are formed. An insulating film sidewall 7, and a metal oxide film sidewall 6 having an L-shaped cross-section are then formed by performing the anisotropic etching of the multilayer film. Subsequently, a conductive layer 8 is formed outside the metal oxide film sidewall 6 using the metal oxide film sidewall 6 as a mask. Finally, a surface oxide film of the conductive layer 8 is removed by using the metal oxide film sidewall 6 as a mask, thus performing the silicide formation of the conductive layer 8. COPYRIGHT: (C)2007,JPO&INPIT
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