NAND Flash Memory Devices and Methods of LSB/MSB Programming the Same

摘要

Multiple bits are programmed in a NAND flash memory device by programming a memory cell with an LSB; storing the LSB into a cache register from the memory cell; programming the memory cell with an MSB that is stored in a main register; storing a data bit into the main register from the memory cell during a first verifying operation; storing a data bit into the cache register from the memory cell during a second verifying operation; and transferring the data bit to the main register from the cache register. Related devices are also disclosed.