发明名称 Bipolar transistor and power amplifier
摘要 A base mesa finger (an emitter ledge layer 15 , a base layer 16 , and a collector layer 17 ) is interposed between two collector fingers (collector electrodes 13 ), and on the base mesa finger, a base finger (a base electrode 12 ) and two emitter fingers (an emitter layer 14 and an emitter electrode 11 ) on both sides of the base finger, are formed. The two emitter fingers are formed symmetric with respect to the base finger as a reference.
申请公布号 US2007012949(A1) 申请公布日期 2007.01.18
申请号 US20060484753 申请日期 2006.07.12
申请人 KAWASHIMA KATSUHIKO;MAEDA MASAHIRO;MURAYAMA KEIICHI;MIYAMOTO HIROTAKA 发明人 KAWASHIMA KATSUHIKO;MAEDA MASAHIRO;MURAYAMA KEIICHI;MIYAMOTO HIROTAKA
分类号 H01L31/00;H01L21/336 主分类号 H01L31/00
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