| 摘要 |
A method for making a semiconductor device is provided which comprises (a) providing a source of actinic radiation ( 601 ), (b) providing a reticle comprising (i) a substrate having a plurality of structures defined therein, said substrate being essentially transparent to the actinic radiation, and (ii) a layer of attenuating material disposed over at least some of said plurality of structures, wherein the layer of attenuating material has a transmission with respect to the actinic radiation that is within the range of about 5% to about 50%, and wherein the combination of the layer of attenuating material and the substrate imparts to the actinic radiation a phase change within the range of about 165° to about 225° ( 603 ), and (c) utilizing the reticle and the source of actinic radiation to impart a pattern to a semiconductor substrate ( 607, 609 ).
|
