METAL-INSULATOR-METAL CAPACITOR MANUFACTURED USING ETCHBACK

摘要

The invention provides a method for manufacturing a metal-insulator-metal (MIM) capacitor, a method for manufacturing an integrated circuit having a metal-insulator-metal (MIM) capacitor, and an integrated circuit having a metal-insulator-metal (MIM) capacitor. The method for manufacturing the metal-insulator-metal (MIM) capacitor, among other steps and without limitation, includes providing a material layer (185) on a substrate (110), and forming a refractory metal layer (210) having a thickness (t₁) on the substrate, at least a portion of the refractory metal layer extending over the material layer. The method further includes reducing the thickness (t₂) of the portion of the refractory metal layer (210) extending over the material layer, thereby forming a thinned refractory metal layer (310), and reacting the thinned refractory metal layer (310) with at least a portion of the material layer to form an electrode for use in a capacitor.