| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which is capable of hot-electron writing and is suitable for the realization of large capacitance with an NAND array constitution. <P>SOLUTION: A plurality of memory cell lines 10 of an NAND structure in series in a line direction are in parallel in a row direction. A diffusion region D of one end of a memory cell line group 11 consisting of a pair of memory cell lines 10 adjacent in a line direction is electrically connected, and a diffusion region S of the other end is electrically isolated. Each memory cell line 10 is formed by connecting a plurality of memory transistors 3 consisting of a memory function body and a control gate formed on the channel region and a plurality of auxiliary transistors 6 formed of a gate insulating film and an auxiliary gate formed on the channel region in series in an arrangement order which keeps the auxiliary transistor 6 adjacent to at least one side of the memory transistor 3. Writing of the memory transistor 3 to the memory function body is carried out by hot-electron injection from a channel region of the adjacent auxiliary transistor 6. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
