| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a raw material of a thin film for a vaporization process which contains precursors where the moisture cannot be measured by the Karl-Fischer method, and is subjected to the sophisticated moisture control. <P>SOLUTION: In the raw material of the thin film for the vaporization process, a molecular structure contains at least one precursor selected from a group composed of silane compound having Si-H, phosphite, copper (II) complex, copper (I) complex, metal amide compound, metal alkoxide compound, alkyl metal compound, and metal hydride compound, and the water content is≤1 ppm. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
