| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a semiconductor substrate which is excellent in crystallinity in the low temperature growth of group IV semiconductor polycrystal, and which enables the growth of high quality group IV semiconductor polycrystalline in which the particle diameter of crystal and orientation are controlled, and to provide an obtained semiconductor substrate. SOLUTION: In the low temperature growth of polycrystal to the substrate of group IV semiconductor, a crystalline nucleus comprising group IV element is previously formed on a substrate at the temperature of 550°C or less, and at the pressure of 15 torr or more using a heat CVD method of germanium halide and silanes. Crystal growth is carried out by a low temperature crystal growth technique of conventional group IV semiconductor using this as a nucleus. Consequently, the above problem is solved. COPYRIGHT: (C)2007,JPO&INPIT
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