| 摘要 |
A transponder device comprises an integrated CMOS circuit with a semiconductor substrate. A first rectifying diode (DS) is formed by the substrate diode of the CMOS circuit. A first MOS transistor structure (DR 1 ) and a second MOS transistor structure (DR 2 ) have their channels connected in series such that they function as a second rectifying diode, the cathode of the first rectifying diode being connected to the anode of the second rectifying diode. The first MOS transistor structure (DR 1 ) and the second MOS transistor structure (DR 2 ) are spaced from each other such that a distance between the two MOS transistor structures is large enough that a parasitic npn-structure formed within the substrate by the first and the second MOS structures has a negligible current gain.
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