| 摘要 |
A multi chamber plasma process chamber is provided to reduce an equipment area and fabricating costs of a multi chamber system by effectively incorporating a power supply system including ignition power, RF power, an impedance matching unit and the like. A plurality of process chambers(100,110,120) include inductively coupled plasma generating units, respectively. A main power supply source(400) supplies RF power for generating plasma to each inductively coupled plasma generating unit. A first impedance matching unit(500) is connected between the main power supply source and the inductively coupled plasma generating unit. An ignition power supplying part(600) receives RF power from the main power supply source and supplies ignition power to an ignition electrode included in the inductively coupled plasma generating unit. A plurality of bias power(300,310,320) supply bias power to each susceptor included in the plurality of process chambers. A plurality of second impedance matching units(200,210,220) are connected between each susceptor and a bias power corresponding to the susceptor. The first impedance matching unit, the plurality of second impedance matching units and the ignition power supplying source are controlled by a control part(700). The plurality of process chambers have a structure with at least two stacked process chambers or a cluster structure.
|
