| 摘要 |
PROBLEM TO BE SOLVED: To give sufficient hot carrier robustness at a high voltage to an input and output circuit device which connects semiconductor devices having different operation voltages. SOLUTION: The input and output device 10 has a pulldown transistor Q1 which is formed in a semiconductor substrate 101, whose gate 105 receives an input signal, whose source diffusion layer 106 is grounded, and whose drain diffusion layer 107 is connected with an internal node Vc; and a cascade transistor Q2 in which a gate 115 receives a power supply voltage VDD, one side of a source drain diffusion layer 116 is connected with an input and output node V0, and the other side of the source drain diffusion layer 116 is connected to the inner node Vc. The substrate potential of the cascade transistor Q2 is set in an electrically floating state. COPYRIGHT: (C)2007,JPO&INPIT
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