| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method that prevents the phenomenon, where the sides expand in a silicide film, such as a tungsten silicide film. SOLUTION: This method comprises a step for forming a gate insulating film 23 on a semiconductor substrate 21; a step for laminating a polysilicon film 24, a silicide film 25, and a hard mask formation film on the gate insulating film 23, in this order; a step for forming a hard mask 26; a step for etching the silicide film 25 by using the hard mask 26 as an etching barrier, and forming an undercut concave 25A at the side; a step for etching the polysilicon film 24 by using the hard mask 26 as an etching barrier, and forming a gate line; and a step for oxidizing the sides of the polysilicon film 24 and silicide film 25 through light oxidation. COPYRIGHT: (C)2007,JPO&INPIT
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