| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can inhibit damages and destruction to a transistor. SOLUTION: The semiconductor device has a first insulating layer on a first substrate, a transistor on the first insulating layer, a second insulating layer on the transistor, a first conductive layer connected to a source region or drain region of the transistor through an opening provided on the second insulating layer, a third insulating layer on the first conductive layer, and a second substrate on the third insulating layer. The transistor has a semiconductor layer, a second conductive layer, and a fourth insulating layer formed between the semiconductor layer and the second conductive layer. One or more layers selected from the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer have a step portion so that they may not overlap the transistor. COPYRIGHT: (C)2007,JPO&INPIT
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