| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a pattern for peeling-off prevention that can correspond to the further microfabrication of a wiring layer and the reduction of a dielectric constant of an interlayer insulating film, and to provide its manufacturing method. SOLUTION: The semiconductor device having a multilayered wiring structure is composed so that a plurality of insulating films 2-7 are formed on a semiconductor substrate 1, wiring 32, 42, 52, 62, and 72 embedded in a plurality of the insulating films 3-7 are provided, and a plurality of the insulating films 3, 4 are those using materials having low dielectric constants. A through-hole penetrating all the insulating films 2-7 is formed at the corner of the semiconductor device. A through-via 10 is formed at the whole through-hole. By this, it is possible to prevent the insulating films from peeling off. Effects of the peeling-off prevention are significant since the through-via does not have a part where a via and the wiring are connected with a cap layer. COPYRIGHT: (C)2007,JPO&INPIT
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