| 摘要 |
PROBLEM TO BE SOLVED: To provide a conductive thin film which is used for enhancing a performance of elements in a high-performance memory and capacity element, etc. which have a basic structure used in an electronic circuit in an electronic apparatus, in particular, an ultraminiature high speed operating memory circuit or an integrated circuit operating in a high frequency area, etc., in combination of a dielectric and conductive thin film. SOLUTION: An inclination function area 121 constitutes the conductive thin film 102. The area 121 gradually changes from a side of a conductor phase 120 (electrode 101) to a side of a dielectric phase 103 (in a thickness direction of the conductor phase 120), at least one of a chemical bonding state, an atom arrangement structural state, and a distribution state of carriers. Then, the conductive thin film has an inclination function which materializes an enhancement of lattice matching properties due to a buffer action and an enhancement of a diffusion controllability due to a barrier action. COPYRIGHT: (C)2007,JPO&INPIT
|
