| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory element allowing substitution of a normally operating row or column of another memory element for a defective row or column of one given memory element; and to provide a system architecture related to it. SOLUTION: This memory system 200 includes a first memory unit 201 having an array of memory cells and a second memory unit 201 having an array of memory cells including a number of redundant cells. A crossbar switch 202 is provided for switching an address to a defective cell in the array of the first memory unit 201 to the second memory unit 201 to access a selected one of the redundant cells. COPYRIGHT: (C)2007,JPO&INPIT
|
