| 摘要 |
Novel etch stop layers for semiconductor devices and methods of forming thereof are disclosed. In one embodiment, an etch stop layer comprises tensile or compressive stress. In another embodiments, etch stop layers are formed having a first thickness in a first region of a workpiece and at least one second thickness in a second region of a workpiece, wherein the at least one second thickness is different than the first thickness. The etch stop layer may be thicker over top surfaces than over sidewall surfaces. The etch stop layer may be thicker over widely-spaced feature regions and thinner over closely-spaced feature regions.
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