发明名称 High temperature resistant solid state pressure sensor
摘要 A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.
申请公布号 US2007013014(A1) 申请公布日期 2007.01.18
申请号 US20060523244 申请日期 2006.09.19
申请人 GUO SHUWEN;ERIKSEN ODD H S;POTASEK DAVID P 发明人 GUO SHUWEN;ERIKSEN ODD H.S.;POTASEK DAVID P.
分类号 H01L29/84;H01L21/00 主分类号 H01L29/84
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