The present invention relates to an integrated device, comprising a semiconductor device (30) formed on a semiconductor substrate(4), a temperature sensing element (15) formed on the semiconductor substrate (4), an electrically insulating layer (16) formed over the temperature sensing element (15), and a metal layer (20) formed over the insulation layer (16) and substantially covering the semiconductor device (30) and the temperature sensing element (15). The present invention also relates to a method of forming a temperature sensing element (15) for integration with a semiconductor device (30).
