APPARATUS FOR MEASURING STRESS OF WAFER IN HIGH TEMPERATURE PROCESS OF HIGH SPEED TEMPERATURE VARIATION

摘要

An apparatus for measuring a stress of a wafer in high-speed/temperature process is provided to accurately compute the stress applied to a surface of the wafer by analyzing a laser value reflected from the surface of the wafer. A chamber(10) is divided into an upper space(12) and a lower space(14) by a glass plate(16). A laser camera(50) is installed at a certain height from an upper surface of the chamber. A halogen lamp(30) is installed in the lower space to apply heat to a wafer via the glass plate. A temperature detecting sensor(28) is installed on the wafer to detect temperature of the heat applied to the wafer. An exhaust pump exhausts air from the upper space via a vacuum port. A main controller computes and displays a level of stress applied to the wafer.