| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photo diode having a small dark current for monitoring a front light of a semiconductor laser to consistently and accurately control a power of the semiconductor laser even under variations in temperature and in age. <P>SOLUTION: The semiconductor light receiving element comprises an SiON layer 7 provided on an InP window layer or an InP substrate 2 by the plasma CVD method, and an alternating film of an Al<SB>2</SB>O<SB>3</SB>/Si or an alternating film of an Al<SB>2</SB>O<SB>3</SB>/TiO<SB>2</SB>is formed on the SiON layer by an ion assist electron beam evaporation technique. A reflection coefficient is set as 0.8 to 0.9, and a light power transmission factor as 0.1 to 0.2 penetrating into the InP layer to a 45° incident radiation of the semiconductor laser. <P>COPYRIGHT: (C)2007,JPO&INPIT |
