| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A semiconductor device includes a lower electrode having a bend in its cross-section,FIG a capacitor dielectric film of a ferroelectric deposited on the top face of the lower electrode and an upper electrode deposited on the top face of the capacitor dielectric film. The upper electrode is deposited by chemical vapor deposition.
|
| 申请公布号 |
US2007015337(A1) |
申请公布日期 |
2007.01.18 |
| 申请号 |
US20060527460 |
申请日期 |
2006.09.27 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YANO HISASHI |
| 分类号 |
H01L27/105;H01L29/94;H01L21/02;H01L21/20;H01L21/8246;H01L27/108;H01L29/76;H01L31/119 |
主分类号 |
H01L27/105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
