发明名称 |
Junction-isolated depletion mode ferroelectric memory devices and systems |
摘要 |
Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells for memory devices and electronic systems. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb.
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申请公布号 |
US2007012978(A1) |
申请公布日期 |
2007.01.18 |
申请号 |
US20060524970 |
申请日期 |
2006.09.21 |
申请人 |
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发明人 |
SALLING CRAIG T.;HUBER BRIAN W. |
分类号 |
H01L29/94;H01L29/76;H01L31/00 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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