发明名称 |
Methods for forming interconnect structures |
摘要 |
A method for forming an interconnect structure. A substrate is provided with a low-k dielectric layer thereon. At least one conductive feature is then formed in the low-k dielectric layer. A cap layer is formed overlying the low-k dielectric layer, and the conductive feature and the low-k dielectric layer is then subjected to an energy source to reduce a dielectric constant thereof.
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申请公布号 |
US2007015355(A1) |
申请公布日期 |
2007.01.18 |
申请号 |
US20050179265 |
申请日期 |
2005.07.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN KENG-CHU;KO CHUNG-CHI;LIAO YI-CHI |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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