发明名称 Method for driving semiconductor device having capacitive load, method and apparatus for driving load, and electronic apparatus
摘要 When a signal is read from a CCD solid-state image pickup element, the CCD solid-state image pickup element is driven with at least two driving voltages so that high-speed reading is performed with generation of noise due to interference between the driving voltages reduced. The CCD solid-state image includes a charge storage section between a vertical transfer register and a horizontal transfer register. By performing the transfer of charge in the direction of columns during an effective transfer period of the transfer in the direction of rows, signal charge of one row generated by a light receiving sensor is transferred to the charge storage section, and by performing the transfer outside the effective transfer period in the transfer in the direction of the row, the signal charge of one row transferred to the charge storage section is transferred to the horizontal transfer register.
申请公布号 US2007013799(A1) 申请公布日期 2007.01.18
申请号 US20060524452 申请日期 2006.09.21
申请人 SONY CORPORATION 发明人 HIROTA ISAO;SEGAMI MASAHIRO;NAKAYAMA KENJI
分类号 H04N5/372 主分类号 H04N5/372
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