| 摘要 |
The system includes a metrology module coupled to a supercritical processing chamber, and the method includes positioning a substrate on a substrate holder in a metrology chamber, measuring a residue in at least one feature of the substrate, determining a supercritical cleaning process recipe based on the measured residue, positioning the substrate on a substrate holder in a supercritical processing chamber coupled to the metrology chamber, cleaning the substrate with a supercritical fluid using the determined supercritical cleaning process recipe, and removing the substrate from the supercritical processing chamber. The method may further include re-positioning the substrate in the metrology chamber, and measuring any remaining residue in at least one feature of the substrate.
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