发明名称 |
INTERCONNECTION METAL, METHOD FOR FABRICATING THE SAME, THIN FILM TRANSISTOR PLATE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A wire, a method for forming the wire, a thin film transistor substrate, and a method for manufacturing the thin film transistor substrate are provided to improve the adhesive force between the wire and a lower layer, thereby preventing the exfoliation of the wire, by disposing a solid solution layer below a low resistance metal layer in the wire. A wire is composed of an adhesive metal layer(2), a solid solution layer(4), a low resistance metal layer(6), and a transparent conductive layer(8) sequentially formed on a substrate(1). The adhesive metal layer is formed of a material, which has an excellent adhesive property and reduces the contact resistance. The solid solution layer is formed by heating a low resistance metal material and a predetermined metal material, which forms a solid solution together with the low resistance metal material. |
申请公布号 |
KR20070008257(A) |
申请公布日期 |
2007.01.17 |
申请号 |
KR20050063342 |
申请日期 |
2005.07.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, BYOUNG JUNE;YANG, SUNG HOON;OH, MIN SEOK;SHIN, WON SUK |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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