| 摘要 |
A semiconductor device is provided to improve an inductance value by a small occupying area by using an interconnection having a toroidal pattern. A semiconductor substrate(10) has a first surface including a hole. An insulation part(12) is made of an insulation material filled in the hole wherein the insulation material has a relative dielectric constant of 10 or lower. An interconnection(20) is disposed on the insulation part, having a circumventive pattern. The interconnection can have a spiral pattern or a toroidal pattern. A stress buffer layer is formed on the interconnection. |
