发明名称 |
A conductive channel pseudo block process and circuit to inhibit reverse engineering |
摘要 |
<p>A technique for and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having a controlled outline. A layer of conductive material having a controlled outline is disposed among said plurality of layers to provide artifact edges of the conductive material that resemble one type of transistor (operable vs. non-operable), when in fact another type of transistor was used.</p> |
申请公布号 |
GB2410835(B) |
申请公布日期 |
2007.01.17 |
申请号 |
GB20050008291 |
申请日期 |
2003.09.23 |
申请人 |
HRL LABORATORIES LLC;RAYTHEON COMPANY |
发明人 |
LAP-WAI CHOW;WILLIAM M CLARK JR;GAVIN J HARBISON;JAMES P BAUKUS |
分类号 |
H01L23/58;G06K19/073 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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