发明名称 A conductive channel pseudo block process and circuit to inhibit reverse engineering
摘要 <p>A technique for and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having a controlled outline. A layer of conductive material having a controlled outline is disposed among said plurality of layers to provide artifact edges of the conductive material that resemble one type of transistor (operable vs. non-operable), when in fact another type of transistor was used.</p>
申请公布号 GB2410835(B) 申请公布日期 2007.01.17
申请号 GB20050008291 申请日期 2003.09.23
申请人 HRL LABORATORIES LLC;RAYTHEON COMPANY 发明人 LAP-WAI CHOW;WILLIAM M CLARK JR;GAVIN J HARBISON;JAMES P BAUKUS
分类号 H01L23/58;G06K19/073 主分类号 H01L23/58
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