METHOD OF FORMING TUNGSTEN LAYER HAVING LOW RESISTANCE

摘要

A method for forming a low-resistance tungsten layer is provided to reduce resistance of a tungsten layer by depositing the tungsten layer on a smooth surface of a lower surface such as an adhesion layer and a barrier layer. An interlayer dielectric(108) is formed on a semiconductor substrate(100). The interlayer dielectric is etched to form contact holes(104,110) exposing a predetermined portion of the semiconductor substrate. A barrier layer(115) is disposed in the contact hole to form a tungsten contact plug(116a). An adhesive layer(118) is formed on the interlayer dielectric and the tungsten contact plug. The adhesive layer is partially etched-back to smooth the surface of the adhesive layer. A tungsten wire is formed on the adhesive layer having the smooth surface.