MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE HAVING IMPROVED COPPER DIFFUSION PREVENTIVE FUNCTION OF PLUGS AND WIRINGS MADE OF COPPER OR COPPER ALLOY AND SEMICONDUCTOR DEVICE OF THIS KIND

摘要

A semiconductor device and a manufacturing method thereof are provided to secure a sufficient barrier property by forming a metal oxide film in a region in which the barrier property of a barrier metal layer is not sufficient. A copper alloy film(21) containing at least two metallic elements is formed on a surface of an insulator which is formed on a semiconductor substrate. A metal film(18) made of pure copper or copper alloy is formed on the copper alloy film. After the above step, the substrate is subjected to heat treatment under a condition that a metal oxide film(20) is formed on a surface of the insulator through reaction between oxygen contained in the insulator and the metal elements contained in the copper alloy film.