| 摘要 |
One embodiment of this method for manufacturing a SIMOX wafer includes: while heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer so as to form an amorphous layer; and heat-treating the silicon wafer obtained by the forming of the amorphous layer so as to form a buried oxide layer, wherein in the forming of the amorphous layer, the implantation of oxygen ions is carried out after preheating the silicon wafer to a temperature lower than the heating temperature of the forming of the high oxygen concentration layer. Another embodiment of this method for manufacturing a SIMOX wafer includes: in the above forming of the high oxygen concentration layer, implanting oxygen ions while heating a silicon wafer at a temperature of 300°C or more; and in the above forming of the amorphous layer, implanting oxygen ions after preheating the silicon wafer to a temperature of less than 300°C. |
