| 摘要 |
A low voltage sputtering for a substrate of large area is provided to avoid an arcing phenomenon easily occurring when a sputtering voltage is high by performing a target sputtering process at a low voltage with respect to a large-area substrate processing system. A sputtering target(164) is biased to a voltage lower than 400 V while a material is deposited on a rectangular substrate. The sputtering target is surrounded by a grounded shield part wherein the shorted distance between the grounded shield part and the sputtering target is smaller than the thickness of a plasma dark space. A magnetron(138) is formed on the back surface of the sputtering target wherein the edge of the magnetron doesn't overlap the grounded shield part. The surface area of the rectangular substrate is not less than 15000 square centimeters.
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