| 摘要 |
A method for manufacturing a capacitor in a semiconductor device is provided to improve leakage current characteristics and breakdown voltage characteristics without the degradation of capacitance by using a ZrxAlyOz dielectric structure as a capacitor dielectric film. A ZrxAlyOz dielectric structure(16) is formed on a lower electrode(15). The ZrxAlyOz dielectric structure is used as a capacitor dielectric film. An upper electrode(17) is formed on the ZrxAlyOz dielectric structure. The sum of x, y and z in the ZrxAlyOz dielectric structure is 1. The rate of x/y is in a predetermined range of 1 to 10.
|
