| 发明名称 |
Schottky diode with durable contact on silicon carbide and method of fabrication |
| 摘要 |
<p>A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.</p> |
| 申请公布号 |
EP1743373(A2) |
申请公布日期 |
2007.01.17 |
| 申请号 |
EP20050725831 |
申请日期 |
2005.03.18 |
| 申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
SENG, WILLIAM, F.;WOODIN, RICHARD, L. |
| 分类号 |
H01L29/872;H01L21/04;H01L29/24;H01L29/47;H01L29/812;H01L31/0312 |
主分类号 |
H01L29/872 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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