| 摘要 |
Provided are a novel fluorene polymer and an antireflective hardmask composition using the same, which is superior in optical properties, mechanical properties, and etch selectivity characteristics and is useful for short-wave lithography process. The fluorene polymer has a structure represented by the following formula 1. In the formula, n is in the range of 1<=n<190, each of R1 and R2 is hydrogen, a hydroxyl group, a C1-10 alkyl group, a C6-10 aryl group, an allyl group, or a halogen atom, and each of R3 and R4 is a reactive moiety reacting with a cross-linking component, or a chromophore moiety selected from the group consisting of phenyl, chrysene, pyrene, fluoroanthrene, benzophenone, thioxanthone, anthracene, and anthracene derivatives.
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