| 摘要 |
A semiconductor device is provided to prevent voids from being formed between the sidewall of a connection hole and a conductor by continuously forming a barrier layer on the sidewall of the connection hole. An interconnection is formed on a first insulation layer, having a stack structure in which an Al alloy layer, a Ti layer and a TiN layer are sequentially stacked. A second insulation layer is formed on the first insulation layer and the interconnection. A connection hole(30a) is formed in the second insulation layer, positioned on the interconnection. The sidewall of the connection hole is coated with a coating layer(31) which is formed by sputtering the interconnection positioned on the bottom of the connection hole. A barrier layer(41) is formed on the coating layer and the bottom of the connection hole. The connection hole is filled with a conductor.
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