APPARATUS FOR TREATING SUBSTRATE AND METHOD OF TREATING SUBSTRATE USING THE SAME

摘要

A substrate process apparatus is provided to form a carbon thin film of an excellent quality by preventing a flow path from being contaminated. A substrate process apparatus has a reaction space. First reaction gas including hydrocarbon gas is supplied by a first gas supply part. Second reaction gas containing hydrogen is supplied by a second gas supply part. A shower head includes a first flow path and a second flow path. The first reaction gas is supplied to the reaction space by the first flow path, connected to the first gas supply part. The second reaction gas is supplied to the reaction gas, connected to the second gas supply part. The shower head includes a first block, a second block in contact with the reaction space, and a third block in contact with the reaction space wherein at least a part of the third block overlaps the second block.