FABRICATION METHOD OF ORIENTATION CONTROLLED SIMGLE-CRYSTALLINE WIRE AND TRANSISTOR ADOPTING THE WIRE

摘要

A single crystalline with a controlled orientation is provided to fabricate high quality nano-wire and transistor on a substrate by forming nano-wire in parallel on a substrate while using a crystalline material like Si, SiGe and the like. A template layer is formed on a substrate(100) made of silicon or sapphire, including a first lateral surface and a second surface confronting the first lateral surface. Pores are formed between the first and the second lateral surfaces of the template layer, having a first opening in the first lateral surface. A single crystalline material layer comes in contact with the first opening formed in the first lateral surface of the template layer. After a second opening connected to the pore formed in the second lateral surface is formed, a crystalline growth material of gas state is supplied through the second opening to form a crystalline wire in the pore by crystalline growth from the single crystalline material layer. The crystalline wire is made of silicon or silicon germanium.