发明名称 |
Polymer memory device formed in via opening |
摘要 |
One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one dielectric layer over the copper contact, forming at least one via in the dielectric layer to expose at least a portion of the copper contact, forming a polymer material in a lower portion of the via, and forming a top electrode material layer in an upper portion of the via. |
申请公布号 |
GB2419231(B) |
申请公布日期 |
2007.01.17 |
申请号 |
GB20050026384 |
申请日期 |
2004.05.11 |
申请人 |
ADVANCED MICRO DEVICES, INC |
发明人 |
NICHOLAS TRIPSAS;MATTHEW S BUYNOSKI;SUZETTE PANGRLE;UZODINMA OKOROANYANWU;ANGELA T HUI;CHRISTOPHER F LYONS;RAMKUMAR SUBRAMANIAN;SERGEY D LOPATIN;MINH VAN NGO;ASHOK M KHATHURIA;MARK S CHANG;PATRICK K CHEUNG;JANE V OGLESBY |
分类号 |
H01L27/28;G11C13/02;H01L21/44;H01L27/00 |
主分类号 |
H01L27/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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