| 摘要 |
A method for growing an excellent quality gallium nitride single crystal with an excellent productivity is provided for growing a gallium nitride single crystal by an Na flux method. The gallium nitride single crystal is grown by using a flux (8) including at least metallic sodium. Under an atmosphere composed of a mixed gas B containing nitrogen gas, the gallium nitride single crystal is grown, under a total atmospheric pressure of 300 or more but not more than 2,000, preferably, under a nitrogen partial pressure of 100 or more but not more than 2,000 in the atmosphere, and preferably, at a growing temperature of 1,000‹C or higher but not higher than 1,500‹C. ® KIPO & WIPO 2007
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