| 摘要 |
Provided are a hardmask composition which comprises a polymer having aromatic ring and showing intense absorption at short wavelength area(for example, 157, 193, 248 nm), and a method for patterning a reverse material layer of substrate by using the composition. The hardmask composition comprises: (a) a polymer having aromatic ring represented by the formula(1); (b) a crosslinking component; and (c) an acidic catalyst. In the formula(1), n is 1<=n<=190, each R1 and R2 is hydrogen, hydroxyl group(-OH), C1-C10 alkyl group, C6-C10 aryl group, allyl group, or halogen atom, and each R3 and R4 is a hydrogen, or comprises a reactive moiety reactive with the crosslinking component, or a chromophore. The patterning method comprises: the steps of (i) providing a material layer on substrate; (ii) forming an antireflective hardmask layer on the material layer by using the hardmask composition; (iii) exposing an imaged layer to radiation in patterned mode and forming a pattern of radiation-exposed area in the imaged layer; (e) selectively removing a part of the imaged layer and the antireflective layer to expose a part of the material layer; and (f) etching an exposed part of the material layer to form a shape of patterned material.
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