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发明名称
Fabrication method of phase-change memory device
摘要
申请公布号
KR100670782(B1)
申请公布日期
2007.01.17
申请号
KR20040090920
申请日期
2004.11.09
申请人
发明人
分类号
H01L21/3065;H01L27/115
主分类号
H01L21/3065
代理机构
代理人
主权项
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