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经营范围
发明名称
Method for forming hafnium oxide layer in semiconductor device
摘要
申请公布号
KR100670671(B1)
申请公布日期
2007.01.17
申请号
KR20020086311
申请日期
2002.12.30
申请人
发明人
分类号
H01L21/316
主分类号
H01L21/316
代理机构
代理人
主权项
地址
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