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发明名称
藉由改变垂直掺质分布以减少矽化物不均匀度之技术
摘要
藉由修改深汲极和源极区中的垂直掺质浓度,可控制金属矽化物区形成期间的反应行为。为此目的,在金属矽化物界面的目标深度附近形成增加的掺质浓度,藉此降低反应速度,并从而改善所得之金属矽化物界面的均匀度。
申请公布号
TW200703476
申请公布日期
2007.01.16
申请号
TW095118981
申请日期
2006.05.29
申请人
高级微装置公司
发明人
温贝利特 法兰克;布朗 大卫;派丝 派瑞克
分类号
H01L21/265(2006.01)
主分类号
H01L21/265(2006.01)
代理机构
代理人
洪武雄;陈昭诚
主权项
地址
美国
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