| 摘要 |
A method and apparatus for generating and controlling a plasma ( 130 ) formed in a capacitively coupled plasma system ( 100 ) having a plasma electrode ( 140 ) and a bias electrode in the form of a workpiece support member ( 170 ), wherein the plasma electrode is unitary and has multiple regions (R<SUB>i</SUB>) defined by a plurality of RF power feed lines ( 156 ) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments ( 420 ) separated by insulators ( 426 ). A set of process parameters A={n, tau<SUB>i</SUB>, Phi<SUB>i</SUB>, P<SUB>i</SUB>, S; L<SUB>i</SUB>} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations L<SUB>i</SUB>, tau<SUB>i </SUB>is the on-time of the RF power for the i<SUP>th </SUP>RF feed line, Phi<SUB>i </SUB>is the phase of the i<SUP>th </SUP>RF feed line relative to a select one of the other RF feed lines, P<SUB>i </SUB>is the RF power delivered to the electrode through the i<SUP>th </SUP>RF feed line at location L<SUB>i</SUB>, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece ( 176 ) being processed with a desired amount or degree of process uniformity.
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